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— Faculty —

ZHOU, Yan

Title:

Associate Professor

Education Background

PhD (Royal Institute of Technology (KTH), Sweden)

MPhil (The Hong Kong Polytechnic University)

BS (University of Science and Technology of China)

Research Field
Spintronics; Microwave Communication; Data Storage
Personal Website

https://sites.google.com/view/appliedspintronics

Email

zhouyan@cuhk.edu.cn

Biography:


Dr. Zhou Yan obtained his bachelor degree in University of Science and Technology of China in 2003 and MPhil degree in The Hong Kong Polytechnic University in 2005. He got his PhD degree from Royal Institute of Technology (KTH, Sweden) in 2009. He mainly works on next-generation spintronics devices including spintronic oscillator, Magnetoresistive Random Access Memory, and magnetic skyrmions for information processing and storage application. Dr. Zhou has published more than 140 papers including 1 Proceedings of the IEEE, 1 Nature Physics, 5 Nature Communications, 1 NPG Asia Materials, and 1 Nano Letters. His GoogleScholar citation is ~2200. Dr. Zhou received the awards of “China outstanding PhD student abroad”, and “Top 100 citation Badge by Scientific Reports”. His work has been reported by Phys.org, Science daily, IEEE Spectrum, Storage Newsletter etc. Prof. Zhou is a senior member of IEEE and editorial board member of Scientific Reports, Editorial review board member of IEEE Magnetics Letters. He is reviewer of Nature Nanotechnology, Nature Communications, Science Advances, Nano Letters, Physical Review X, Physical Review Letters, Physical Review B, Applied Physics Letters and IEEE Transactions on Electronic Devices etc. In addition to conducting cutting-edge research, he is devoted to high-quality teaching. He was awarded the first “Presidential Exemplary Teaching Award” in CUHKSZ in 2018.


Academic Publications:


Representative Academic Publications (* represents correspondence author):

1. “A reversible conversion between a skyrmion and a domain-wall pair in junction geometry” ,Yan Zhou* and M. Ezawa*, Nature Communications, 5, 4652, (2014). [Web of Science Highly Cited paper]

2. “Dynamically stabilized magnetic skyrmions”, Yan Zhou, E. Iacocca, A. Awad, R. K. Dumas, F. C. Zhang, H. B. Braun, and J. Åkerman, Nature Communications, 6, 8193, (2015).

3. “Magnetic bilayer skyrmion without topological hall effect”, , X. C. Zhang, Yan Zhou*, M. Ezawa*, Nature Communications, 7, 10293 (2016).

4. “Skyrmion-Based Dynamic Magnonic Crystal”, F. Ma*, Yan Zhou*, H. B. Braun, and W. S. Lew, Nano Letters, 15, 4029, (2015).

5. “Magnetic skyrmion logic gates: conversion, duplication and merging of skyrmions”, X. C. Zhang, M. Ezawa*, and Yan Zhou*, Scientific Reports, 5, 9400, (2015). [Web of Science Highly Cited paper]

6. “Skyrmion-Electronics: An Overview and Outlook” Wang Kang, Yangqi Huang, Xichao Zhang, Yan Zhou*, and Weisheng Zhao* Proceedings of the IEEE, Vol. 104, pp. 2040, No. 10, October 2016.

7. “Skyrmion dynamics in a frustrated ferromagnetic film and current-induced helicity locking-unlocking transition” Xichao Zhang, Jing Xia, Yan Zhou*, Xiaoxi Liu, Han Zhang, and Motohiko Ezawa*

Nature Communications, 8, 1717, (2017)

8. “Fibre Optics for Spin Waves”,  X. J. Xing and Yan Zhou*, NPG Asia Materials, 8, e246 (2016).  doi:10.1038/am.2016.25

9. “Direct Observation of the Skyrmion Hall Effect”, W. Jiang, X. C. Zhang, Guoqiang Yu, Wei Zhang, M. Benjamin Jungfleisch, John E. Pearson, Olle Heinonen, Kang L. Wang, Yan Zhou, Axel Hoffmann, Suzanne G. E. te Velthuis, Nature Physics, 13, 162–169 (2017).

10. “Current-driven dynamics and inhibition of the skyrmion Hall effect of ferrimagnetic skyrmions in GdFeCo films”, Seonghoon Woo, Kyung Mee Song, Xichao Zhang, Yan Zhou, Motohiko Ezawa, S. Finizio, J. Raabe, Jun Woo Choi, Byoung-Chul Min, Hyun Cheol Koo, Joonyeon Chang , Nature Communications, 9, 959, (2018).

11. “A compact skyrmionic leaky-integrate-fire spiking neuron device”, Xing Chen, Wang Kang, Daoqian Zhu, Xichao Zhang, Na Lei, Youguang Zhang, Yan Zhou and Weisheng Zhao

Nanoscale, accepted, (2018) DOI:10.1039/C7NR09722K

12. “Negative capacitance transistors with monolayer black phosphorus”, Fei Liu, Yan Zhou*, Yijiao Wang, Xiaoyan Liu, Jian Wang, Hong Guo, npj Quantum Materials 1, 16004 (2016).  doi:10.1038/npjquantmats.2016.4